Eliminating Leakage Currents in 3C-SiC/Si Devices Through the Fabrication of Suspended Structures

3C-SiC/Si devices, fabrication, leakage currents, microelectromechanical systems

Sam Pfeffer-Matthews, “Eliminating Leakage Currents in 3C-SiC/Si Devices Through the Fabrication of Suspended Structures,” URSS SHOWCASE, accessed February 2, 2025, https://urss.warwick.ac.uk/items/show/265.