Eliminating Leakage Currents in 3C-SiC/Si Devices Through the Fabrication of Suspended Structures

3C-SiC/Si devices, fabrication, leakage currents, microelectromechanical systems

Sam Pfeffer-Matthews, “Eliminating Leakage Currents in 3C-SiC/Si Devices Through the Fabrication of Suspended Structures,” URSS SHOWCASE, accessed November 16, 2024, https://urss.warwick.ac.uk/items/show/265.